![](https://lstatic.shangxueba.com/jiandati/h5/images/m_q_title.png)
[单选题]
电路如图所示,要使得晶体管工作在饱和区,且有ID=0.4mA,VD=0.5V;已知该NMOS晶体管的Vt=0.7V,L=1μm,W=32μm,
电路如图所示,要使得晶体管工作在饱和区,且有ID=0.4mA,VD=0.5V;已知该NMOS晶体管的Vt=0.7V,L=1μm,W=32μm,
,忽略沟道长度调制效应,则电阻
=()kΩ,
=()kΩ。![电路如图所示,要使得晶体管工作在饱和区,且有ID=0.4mA,VD=0.5V;已知该NMOS晶体管的](https://img2.soutiyun.com/shangxueba/ask/21057001-21060000/21059890/ae29c11-chaoxing2016-325931.png)
A.5, 3.25
B.4, 6
C.3, 7
D.3.25, 5
提问人:网友chenhaihui
发布时间:2022-01-07